Nanocone structures with limited interspace grown by MOVPE
نویسندگان
چکیده
منابع مشابه
InAsP quantum dot lasers grown by MOVPE.
We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm(-2), compared with 150 Acm(-2) for InP quantum ...
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Self-assembled quantum dots of InAs have been grown on InP substrates by metal-organic vapour phase epitaxy. The effect of the growth temperature and the growth rate on the morphology and the optical properties of the quantum dots is studied using atomic force microscopy and photoluminescence spectroscopy. The spectral shape of the low temperature photoluminescence depends strongly on the growt...
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In this paper, we address two different aspects relevant to the growth of GaN. The first part concerns alternative nitrogen source whereas in the second part, we report experimental results on Mg doping. Several nitrogen precursors have been used for the growth of GaN in MOVPE. To produce active species from N2 or NH3, a remote Plasma Enhanced Chemical Vapour Deposition (RPECVD) process has bee...
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Pen-Hsiu Chang , N.C. Chen, Chin-An Chang1, Hsian-Chu Peng, Chuang-Feng Shih, KuoShung Liu, Shih-Kai Lin, Kun-Ta Wu, Shang-Chia Chen, Chao-Ping Huang, Hong-Syuan Wang, Pu-Tai Yang, C.-T. Liang, Y.H. Chang and Y.F. Chen Institute of Electro-Optical Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan Department of Materials Science and Engineering, National Tsing Hua University, H...
متن کاملStructural and Spectroscopic Properties of AlN Layers Grown by MOVPE
The effects on surface morphology, crystal quality, and growth rate of undoped AlN layers grown on c-plane sapphire substrates due to the changes in growth parameters, such as V-III ratio, N2-H2 ratio, and growth temperature in LP-MOVPE are studied here. The optimized growth process resulted in an almost flat surface morphology with a significantly reduced number of hexagonal pits (3 · 10 cm−2)...
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ژورنال
عنوان ژورنال: Lithuanian Journal of Physics
سال: 2020
ISSN: 2424-3647,1648-8504
DOI: 10.3952/physics.v59i4.4133